ENME Webcast Spring 2006
Leaders in Mechanical Engineering Lecture Series
Friday, January 20, 2006, at 2:00pm
1 hour, Real format
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Title: High Temperature Electronic Packaging
Professor Wayne Johnson · Auburn University
Abstract: The availability of silicon-on-insulator (SOI) and silicon carbide (SiC) devices has greatly expanded the possibilities for high temperature circuit designs. SOI devices have the potential to operate at temperatures up to 300oC to provide control logic, while SiC power devices can operate up to 500oC with little decrease in performance. SiC devices can also be used to build simple analog circuits to interface with sensors operating in these extreme environments. The combination of these devices are ideally suited to the extreme environments encountered in combustion engines, high power switching circuits, aircraft electronics, and spacecraft for exploration.
